Leading-edge Technology

Ozone Gas Generating System

Features:

• Generation of ultra-high concentration ozone gas by adopting the nitrogen non-adding method to achieve ultra-high, industry leading concentrations of 400g/m³(N)
• Restriction in generation of metal contaminant by adopting the nitrogen non-adding method to clean ozone gas (of which nitrogen oxide generation is restricted to its ultimate limit*) and maintain the desired quality for miniaturizing the pattern and enhancing film quality.
  *Nitrogen oxide concentration 0.01ppm or less (1/10000 as comparison with our previous model)
• Succession of unique ultra-short gap discharge technology with excellent start-up characteristics, stability and cooling efficiency.
• Compatible to international standard and in compliance with CE marking and SEMI-S2

H series Generates the industry's leading super-high concentration ozone gas without using nitrogen additives predominantly for semiconductor and manufacturing processes. P series Generates clean ozone gas using only highly pure oxygen without nitrogen additives predominantly for semiconductor and manufacturing processes. C series Generates clean ozone gas suitable for semiconductor manufacturing processes N series Generates high concentration ozone gas using common oxygen. Main applications include semiconductor manufacturing processes, chemical processes, food manufacturing processes, and water treatment.

Ozone Water Producing System

U series Manufacture of clean ozone water suitable for semiconductor manufacturing processes. Main applications include semiconductor manufacturing processes and precision machine part cleaning.

Busbar Bonding Machine 

Features

• Bonds lead wire to the thin plate glass directly.
• Forms busbars without heat, solder materials, or consumables.
• Obtains low contact resistance and improves electrical property.
• Damages to the glass can be reduced by the original technology.

Basic Specifications

• Automatic tension-control of lead wire.
• Monitoring System (Manufacturing Conditions, Trace of Bonding).
• Exchangeable tip (tool)
• Anvil & Fixing Structure (reduces damage to the glass).

Bonding Achievements

• Glass thickness [mm]: 0.65 ~ 4
• Surface material of the glass
  • Raw glass
  • Thin film deposited (ITO, ZnO, Ag, Cr, Al, Ti, Ni, etc.)
• Size of the plate glass [mm]
  • □100, □300, 500 x 1000, 600 x 1200 etc.